BC847BWT1G
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- Mfr.Part #
- BC847BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 778
- In Stock ：
- 778
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 5 Weeks
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Max Power Dissipation :
- 150mW
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 900μm
- Pin Count :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 600mV
- Current Rating :
- 100mA
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- hFE Min :
- 150
- Transition Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Length :
- 2.2mm
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.35mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Datasheets
- BC847BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847BWT1G Applications
There are a lot of ON Semiconductor
BC847BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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