BC847BW,135
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- Mfr.Part #
- BC847BW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 1,922,370
- In Stock ：
- 1,922,370
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Power Dissipation :
- 200mW
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC847
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Current :
- 1A
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2013
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847BW,135
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847BW,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847BW,135 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847BW,135 Applications
There are a lot of Nexperia USA Inc.
BC847BW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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