BC847BVC-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Terminal Form :

Flat

Factory Lead Time :

19 Weeks

Polarity :

NPN

Radiation Hardening :

No

Height :

600μm

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

Weight :

3.005049mg

Mount :

Surface Mount

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Power Dissipation :

150mW

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Contact Plating :

Tin

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

50V

Collector Emitter Saturation Voltage :

300mV

Base Part Number :

BC847BV

Transition Frequency :

100MHz

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Breakdown Voltage :

45V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Gain Bandwidth Product :

100MHz

Transistor Type :

2 NPN (Dual)

Mounting Type :

Surface Mount

Number of Pins :

6

Pin Count :

6

Packaging :

Tape and Reel (TR)

Published :

2000

Number of Terminations :

6

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Length :

1.6mm

Element Configuration :

Dual

Width :

1.2mm