BC847BV,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

300mW

Radiation Hardening :

No

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

45V

Pin Count :

6

JESD-609 Code :

e3

Published :

2010

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Element Configuration :

Single

Number of Pins :

6

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Terminal Form :

Flat

Series :

Automotive, AEC-Q101

Peak Reflow Temperature (Cel) :

260

hFE Min :

200

Power Dissipation :

300mW

Polarity :

NPN

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

50V

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Base Part Number :

BC847BV

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Max Breakdown Voltage :

45V

Transition Frequency :

100MHz

Frequency :

100MHz

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

15nA ICBO

Mount :

Surface Mount