BC847B
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- Mfr.Part #
- BC847B
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 18,927
- In Stock ：
- 18,927
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 300MHz
- Length :
- 3.05mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 50V
- Pin Count :
- 3
- Factory Lead Time :
- 19 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- 90mV
- Transition Frequency :
- 300MHz
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Height :
- 1.1mm
- Weight :
- 7.994566mg
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Terminations :
- 3
- Power Dissipation :
- 310mW
- Published :
- 2012
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BC847
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 200
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Additional Feature :
- High Reliability
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 300mW
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- Datasheets
- BC847B
BC847B Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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