BC847B-7-F
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- Mfr.Part #
- BC847B-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 17,943
- In Stock ：
- 17,943
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Max Collector Current :
- 200mA
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 310mW
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Width :
- 1.4mm
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Pbfree Code :
- yes
- Length :
- 3.05mm
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 90mV
- Current - Collector (Ic) (Max) :
- 100mA
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA
- Lead Free :
- Lead Free
- Factory Lead Time :
- 19 Weeks
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Height :
- 1.1mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Base Part Number :
- BC847
- Frequency :
- 300MHz
- hFE Min :
- 200
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 150°C
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- BC847B-7-F
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847B-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BC847B-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC847B-7-F Applications
There are a lot of Diodes Incorporated
BC847B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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