BC846S,125

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN

Power Dissipation :

300mW

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

80V

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

100MHz

Transistor Application :

SWITCHING

Element Configuration :

Dual

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

65V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Contact Plating :

Tin

Base Part Number :

BC846S

Emitter Base Voltage (VEBO) :

6V

Published :

2007

Reference Standard :

IEC-134

Number of Elements :

2

Operating Temperature :

150°C TJ

Frequency :

100MHz

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

110

Max Breakdown Voltage :

65V

Number of Pins :

6

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

15nA ICBO

Lead Free :

Lead Free

Mount :

Surface Mount

Pin Count :

6

Collector Emitter Voltage (VCEO) :

65V

Transistor Type :

2 NPN (Dual)