BC846AS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

hFE Min :

110

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

80V

Weight :

6.010099mg

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

65V

Element Configuration :

Dual

Base Part Number :

BC846AS

Transistor Type :

2 NPN (Dual)

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Number of Terminations :

6

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Number of Pins :

6

Height :

1mm

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

15nA

Collector Emitter Saturation Voltage :

200mV

Transition Frequency :

100MHz

Mount :

Surface Mount

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

6V

Length :

2.2mm

Max Collector Current :

100mA

Polarity :

NPN

Max Breakdown Voltage :

65V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.35mm

Published :

2007

Collector Emitter Voltage (VCEO) :

65V

Package / Case :

6-TSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Max Power Dissipation :

200mW

Factory Lead Time :

15 Weeks

Pbfree Code :

yes

Transistor Element Material :

SILICON

Power Dissipation :

200mW

Radiation Hardening :

No

Frequency :

100MHz