BC846AS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V

Number of Terminations :

6

REACH SVHC :

No SVHC

Number of Pins :

6

Current - Collector Cutoff (Max) :

15nA

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

65V

Transistor Type :

2 NPN (Dual)

Length :

2.2mm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

65V

Number of Elements :

2

Max Power Dissipation :

200mW

hFE Min :

110

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

Max Breakdown Voltage :

65V

Width :

1.35mm

Collector Base Voltage (VCBO) :

80V

Polarity :

NPN

Pin Count :

6

Mounting Type :

Surface Mount

Weight :

6.010099mg

Published :

2007

Power Dissipation :

200mW

Contact Plating :

Tin

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

200mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Frequency :

100MHz

Base Part Number :

BC846AS

Emitter Base Voltage (VEBO) :

6V

Height :

1mm

Lead Free :

Lead Free

Mount :

Surface Mount