2SD2704KT146
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- Mfr.Part #
- 2SD2704KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.3A SMT3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 50mV
- Termination :
- SMD/SMT
- hFE Min :
- 820
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 3mA, 30mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 300mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2SD2704
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Terminal Finish :
- TIN SILVER COPPER
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 35MHz
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 4mA 2V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Power Dissipation :
- 200mW
- HTS Code :
- 8541.21.00.95
- Collector Emitter Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Max Collector Current :
- 300mA
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 20V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 25V
- Gain Bandwidth Product :
- 35MHz
- Max Breakdown Voltage :
- 20V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD2704KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2704KT146 Overview
DC current gain in this device equals 820 @ 4mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 50mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 100mV @ 3mA, 30mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 25V to gain high efficiency.As a result, the part has a transition frequency of 35MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 300mA volts.
2SD2704KT146 Features
the DC current gain for this device is 820 @ 4mA 2V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 100mV @ 3mA, 30mA
the emitter base voltage is kept at 25V
a transition frequency of 35MHz
2SD2704KT146 Applications
There are a lot of ROHM Semiconductor
2SD2704KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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