2SD2016
- Mfr.Part #
- 2SD2016
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 200V 3A TO220F
- Stock
- 921
- In Stock :
- 921
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Package Type :
- TO-220F
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminals :
- 3
- Operating Temp Range :
- -55C to 150C
- Product Status :
- Active
- Mounting :
- Through Hole
- Frequency - Transition :
- 90MHz
- Collector Current-Max (IC) :
- 3 A
- Supplier Device Package :
- TO-220F
- Mounting Type :
- Through Hole
- DC Current Gain-Min (hFE) :
- 1000
- Power - Max :
- 25W
- Rad Hardened :
- No
- DC Current Gain :
- 1000
- Series :
- -
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Transition Frequency :
- 90MHz
- Manufacturer :
- Sanken Electric Co Ltd
- Maximum Collector Cut-off Current :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.5mA, 1A
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Collector-Base Voltage :
- 200(V)
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Collector-Emitter Voltage :
- 200(V)
- Power Dissipation-Max (Abs) :
- 25 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 3 A
- Emitter-Base Voltage :
- 6(V)
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-220AB
- Collector-Emitter Voltage-Max :
- 200 V
- Pbfree Code :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Operating Temperature Classification :
- Military
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Package :
- Bulk
- Collector Emitter Breakdown Voltage :
- 200V
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Additional Feature :
- BUILT IN BIAS RESISTOR
- Number of Elements :
- 1
- Power Dissipation :
- 25(W)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Single
- Collector Current (DC) :
- 3(A)
- ECCN Code :
- EAR99
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 25W
- Datasheets
- 2SD2016

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2016 Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1.5mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 90MHz.Product package TO-220F comes from the supplier.200 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 200 VV - Maximum voltage.A maximum collector current of 3A volts is possible.
2SD2016 Features
the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 1.5V @ 1.5mA, 1A
a transition frequency of 90MHz
the supplier device package of TO-220F
2SD2016 Applications
There are a lot of Sanken
2SD2016 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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