2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 38,333
- In Stock ：
- 38,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 20
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Power Dissipation :
- 25W
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 400mV
- Power Dissipation :
- 25W
- Case Connection :
- Isolated
- Max Collector Current :
- 3A
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- TO-220-3 Full Pack
- Base Part Number :
- 2SD2
- Gain Bandwidth Product :
- 3MHz
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Number of Pins :
- 3
- Datasheets
- 2SD2012
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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