2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 38,333
- In Stock ：
- 38,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Lead Free :
- Lead Free
- hFE Min :
- 20
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Power Dissipation :
- 25W
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-220-3 Full Pack
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector (Ic) (Max) :
- 3A
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 25W
- Base Part Number :
- 2SD2
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- 2SD2012
2SD2012 Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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