2SD2015
- Mfr.Part #
- 2SD2015
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 4A TO220F
- Stock
- 1,388
- In Stock :
- 1,388
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temp Range :
- -55C to 150C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 40MHz
- Supplier Device Package :
- TO-220F
- DC Current Gain :
- 2000
- Power - Max :
- 25W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting :
- Through Hole
- Power Dissipation :
- 25(W)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Qualification Status :
- Not Qualified
- Operating Temperature Classification :
- Military
- Operating Temperature :
- 150°C TJ
- Package :
- Bulk
- Emitter-Base Voltage :
- 6(V)
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.167
- Transistor Type :
- NPN - Darlington
- Package Type :
- TO-220F
- Manufacturer :
- Sanken Electric Co Ltd
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- Number of Terminations :
- 3
- Collector Current-Max (IC) :
- 4 A
- Series :
- -
- Polarity :
- NPN
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Package Shape :
- RECTANGULAR
- Collector-Base Voltage :
- 150(V)
- Max Collector Current :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A 2V
- Package / Case :
- TO-220-3 Full Pack
- Frequency - Transition :
- 40MHz
- Case Connection :
- Isolated
- Collector-Emitter Voltage-Max :
- 120 V
- ECCN Code :
- EAR99
- DC Current Gain-Min (hFE) :
- 2000
- Collector Current (DC) :
- 4(A)
- Collector-Emitter Voltage :
- 120(V)
- Mount :
- Through Hole
- Product Status :
- Active
- Rad Hardened :
- No
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current - Collector (Ic) (Max) :
- 4 A
- Max Power Dissipation :
- 25W
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Published :
- 2001
- Maximum Collector Cut-off Current :
- 10
- Number of Elements :
- 1
- Terminal Position :
- Single
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 25 W
- Datasheets
- 2SD2015
2SD2015 Documents

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2015 Overview
DC current gain in this device equals 2000 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2mA, 2A.As a result, the part has a transition frequency of 40MHz.Product comes in TO-220F supplier package.Maximal collector-emitter voltage can be set at 120 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.
2SD2015 Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 2mA, 2A
a transition frequency of 40MHz
the supplier device package of TO-220F
2SD2015 Applications
There are a lot of Sanken
2SD2015 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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