2SD2096T114E
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- Mfr.Part #
- 2SD2096T114E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- HRT
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A HRT
- Stock
- 593
- In Stock ：
- 593
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pin Count :
- 3
- Max Power Dissipation :
- 1.8W
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 1V
- Current Rating :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 8MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Package / Case :
- HRT
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 60V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3/e2
- Terminal Position :
- Single
- Transistor Type :
- NPN
- Frequency - Transition :
- 8MHz
- Terminal Finish :
- TIN/TIN COPPER
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SD2096
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- 2SD2096T114E
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN HRT Tape & Reel (TR) Through Hole
2SD2096T114E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 8MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
2SD2096T114E Features
the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
the current rating of this device is 3A
a transition frequency of 8MHz
2SD2096T114E Applications
There are a lot of ROHM Semiconductor
2SD2096T114E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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