2SD2096T114E
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- Mfr.Part #
- 2SD2096T114E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- HRT
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A HRT
- Stock
- 593
- In Stock ：
- 593
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Package / Case :
- HRT
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Terminal Finish :
- TIN/TIN COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Published :
- 2004
- Max Power Dissipation :
- 1.8W
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3/e2
- Transistor Type :
- NPN
- Base Part Number :
- 2SD2096
- Current Rating :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 60V
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Frequency - Transition :
- 8MHz
- Terminal Position :
- Single
- Transition Frequency :
- 8MHz
- Configuration :
- Single
- Datasheets
- 2SD2096T114E
2SD2096T114E Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN HRT Tape & Reel (TR) Through Hole
2SD2096T114E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 8MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
2SD2096T114E Features
the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
the current rating of this device is 3A
a transition frequency of 8MHz
2SD2096T114E Applications
There are a lot of ROHM Semiconductor
2SD2096T114E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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