2SD2082
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- Mfr.Part #
- 2SD2082
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 16A TO3PF
- Stock
- 23,481
- In Stock ：
- 23,481
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package Shape :
- RECTANGULAR
- RoHS Status :
- RoHS Compliant
- Package Type :
- TO-3PF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- Maximum Collector Cut-off Current :
- 10
- Case Connection :
- Isolated
- Max Power Dissipation :
- 75W
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 8A 4V
- Max Collector Current :
- 16A
- Operating Temp Range :
- -55C to 150C
- Collector-Emitter Voltage :
- 120(V)
- Power Dissipation :
- 75(W)
- Collector-Base Voltage :
- 120(V)
- Transistor Element Material :
- SILICON
- Collector-Emitter Voltage-Max :
- 120 V
- Transition Frequency :
- 20MHz
- Reach Compliance Code :
- Unknown
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter-Base Voltage :
- 6(V)
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 36 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Current-Max (IC) :
- 16 A
- Mounting :
- Through Hole
- Packaging :
- Bulk
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 75 W
- Supplier Device Package :
- TO-3PF
- Terminal Position :
- Single
- Transistor Type :
- NPN - Darlington
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.05
- Power - Max :
- 75W
- Pbfree Code :
- yes
- Collector Current (DC) :
- 16(A)
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 16 A
- Operating Temperature Classification :
- Military
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Collector Emitter Breakdown Voltage :
- 120V
- Polarity :
- NPN
- Base-Emitter Saturation Voltage (Max) :
- 2.5(V)
- Lead Free :
- Lead Free
- DC Current Gain-Min (hFE) :
- 2000
- Package / Case :
- TO-3P-3 Full Pack
- Mount :
- Through Hole
- Series :
- -
- Rad Hardened :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1.5V
- DC Current Gain :
- 2000
- Frequency - Transition :
- 20MHz
- Manufacturer :
- Sanken Electric Co Ltd
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 16mA, 8A
- Published :
- 2001
- Datasheets
- 2SD2082
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Bulk Through Hole
2SD2082 Overview
In this device, the DC current gain is 2000 @ 8A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 16mA, 8A.20MHz is present in the transition frequency.Supplier device package TO-3PF comes with the product.Voltage of maximal collector-emitter is set to 120 V.The device exhibits a collector-emitter breakdown at 120 V.Maximum collector currents can be below 16A volts.
2SD2082 Features
the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 20MHz
the supplier device package of TO-3PF
2SD2082 Applications
There are a lot of Sanken
2SD2082 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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