2SD2082
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- Mfr.Part #
- 2SD2082
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 16A TO3PF
- Stock
- 23,481
- In Stock ：
- 23,481
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature Classification :
- Military
- Mounting :
- Through Hole
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 16A
- Collector-Emitter Voltage :
- 120(V)
- Base-Emitter Saturation Voltage (Max) :
- 2.5(V)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 8A 4V
- Number of Terminations :
- 3
- DC Current Gain-Min (hFE) :
- 2000
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Collector Current-Max (IC) :
- 16 A
- Frequency - Transition :
- 20MHz
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Maximum Collector Cut-off Current :
- 10
- Collector-Base Voltage :
- 120(V)
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Max Power Dissipation :
- 75W
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Supplier Device Package :
- TO-3PF
- Pbfree Code :
- yes
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 0.05
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 16mA, 8A
- Collector Emitter Breakdown Voltage :
- 120V
- Surface Mount :
- No
- Packaging :
- Bulk
- Emitter-Base Voltage :
- 6(V)
- Number of Elements :
- 1
- Transition Frequency :
- 20MHz
- Power Dissipation-Max (Abs) :
- 75 W
- Rad Hardened :
- No
- Current - Collector (Ic) (Max) :
- 16 A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Series :
- -
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Mount :
- Through Hole
- Package :
- Bulk
- Factory Lead Time :
- 36 Weeks
- Terminal Position :
- Single
- Case Connection :
- Isolated
- Collector Current (DC) :
- 16(A)
- Package Type :
- TO-3PF
- Package / Case :
- TO-3P-3 Full Pack
- Published :
- 2001
- Power Dissipation :
- 75(W)
- Collector-Emitter Voltage-Max :
- 120 V
- Operating Temp Range :
- -55C to 150C
- Manufacturer :
- Sanken Electric Co Ltd
- Terminal Form :
- THROUGH-HOLE
- DC Current Gain :
- 2000
- Power - Max :
- 75W
- RoHS Status :
- RoHS Compliant
- Polarity :
- NPN
- Number of Terminals :
- 3
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SD2082
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3 Full Pack Bulk Through Hole
2SD2082 Overview
In this device, the DC current gain is 2000 @ 8A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 16mA, 8A.20MHz is present in the transition frequency.Supplier device package TO-3PF comes with the product.Voltage of maximal collector-emitter is set to 120 V.The device exhibits a collector-emitter breakdown at 120 V.Maximum collector currents can be below 16A volts.
2SD2082 Features
the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 20MHz
the supplier device package of TO-3PF
2SD2082 Applications
There are a lot of Sanken
2SD2082 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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