2SD2012-BP

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Mfr.Part #
2SD2012-BP
Manufacturer
Micro Commercial Components (MCC)
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 3A TO220AB
Stock
46,296
In Stock :
46,296

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Manufacturer :
Micro Commercial Components (MCC)
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100μA ICBO
JESD-609 Code :
e3
Voltage - Collector Emitter Breakdown (Max) :
60V
Case Connection :
Isolated
Polarity/Channel Type :
NPN
Terminal Finish :
Matte Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 2A
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 5V
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSFM-T3
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Type :
NPN
Number of Elements :
1
Surface Mount :
No
Configuration :
Single
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Frequency - Transition :
3MHz
Power - Max :
2W
Transition Frequency :
3MHz
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Package / Case :
TO-220-3
Current - Collector (Ic) (Max) :
3A
Qualification Status :
Not Qualified
Introducing Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) 2SD2012-BP from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, 2SD2012-BP pinout, 2SD2012-BP datasheet PDF, 2SD2012-BP amp .Beyond Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) 2SD2012-BP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Micro Commercial Components (MCC) 2SD2012-BP


NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Through Hole

2SD2012-BP Overview


In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 2A.3MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.

2SD2012-BP Features


the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
a transition frequency of 3MHz


2SD2012-BP Applications


There are a lot of Micro Commercial Co
2SD2012-BP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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