2SD2012-BP
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- Mfr.Part #
- 2SD2012-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220AB
- Stock
- 46,296
- In Stock ：
- 46,296
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 3A
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- Isolated
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Elements :
- 1
- Transition Frequency :
- 3MHz
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 3MHz
- Package / Case :
- TO-220-3
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- Power - Max :
- 2W
- Datasheets
- 2SD2012-BP
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Through Hole
2SD2012-BP Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 2A.3MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.
2SD2012-BP Features
the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
a transition frequency of 3MHz
2SD2012-BP Applications
There are a lot of Micro Commercial Co
2SD2012-BP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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