2SD2703TL
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- Mfr.Part #
- 2SD2703TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TUMT3
- Stock
- 9,850
- In Stock ：
- 9,850
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2SD2703
- Package / Case :
- 3-SMD, Flat Lead
- Element Configuration :
- Single
- Published :
- 2013
- Length :
- 2.1mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Transistor Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 320MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- hFE Min :
- 270
- Collector Emitter Saturation Voltage :
- 120mV
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 1A
- Transition Frequency :
- 320MHz
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Height :
- 820μm
- Max Power Dissipation :
- 800mW
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 1.8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- TIN COPPER
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Contact Plating :
- Copper, Tin
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Datasheets
- 2SD2703TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SD2703TL Overview
DC current gain in this device equals 270 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 25mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 320MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
2SD2703TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SD2703TL Applications
There are a lot of ROHM Semiconductor
2SD2703TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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