2SD2662T100
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- Mfr.Part #
- 2SD2662T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A MPT3
- Stock
- 1,675
- In Stock ：
- 1,675
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SD2662
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Terminal Finish :
- TIN COPPER
- Qualification Status :
- Not Qualified
- Power - Max :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 330MHz
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Frequency - Transition :
- 330MHz
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e2
- Terminal Form :
- Flat
- Number of Pins :
- 4
- Reach Compliance Code :
- not_compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SD2662T100
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2662T100 Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 330MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 1.5A volts.
2SD2662T100 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 330MHz
2SD2662T100 Applications
There are a lot of ROHM Semiconductor
2SD2662T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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