2SD2657TL
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- Mfr.Part #
- 2SD2657TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT3
- Stock
- 23,986
- In Stock ：
- 23,986
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- Current Rating :
- 1.5A
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2SD2657
- Width :
- 1.6mm
- Height :
- 900μm
- hFE Min :
- 270
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 350mV
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Voltage - Rated DC :
- 30V
- Package / Case :
- SC-96
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 20 Weeks
- Pbfree Code :
- yes
- Pin Count :
- 3
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- Terminal Position :
- Dual
- Datasheets
- 2SD2657TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2657TL Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1.5A volts is possible.
2SD2657TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
2SD2657TL Applications
There are a lot of ROHM Semiconductor
2SD2657TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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