2SD2657KT146
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- Mfr.Part #
- 2SD2657KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A SMT3
- Stock
- 6,123
- In Stock ：
- 6,123
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Continuous Collector Current :
- 1.5A
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Frequency :
- 330MHz
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Base Part Number :
- 2SD2657
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Published :
- 1998
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Saturation Voltage :
- 160mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- hFE Min :
- 270
- Current Rating :
- 1.5A
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 30V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Transition Frequency :
- 330MHz
- Max Breakdown Voltage :
- 30V
- Width :
- 1.6mm
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 330MHz
- Factory Lead Time :
- 13 Weeks
- Element Configuration :
- Single
- Transistor Type :
- NPN
- JESD-609 Code :
- e1
- Length :
- 2.9mm
- Termination :
- SMD/SMT
- Max Power Dissipation :
- 200mW
- Datasheets
- 2SD2657KT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2657KT146 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 330MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SD2657KT146 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 330MHz
2SD2657KT146 Applications
There are a lot of ROHM Semiconductor
2SD2657KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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