2SD2652T106
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- Mfr.Part #
- 2SD2652T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 12V 1.5A UMT3
- Stock
- 25,571
- In Stock ：
- 25,571
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Radiation Hardening :
- No
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 15V
- Number of Terminations :
- 3
- Base Part Number :
- 2SD2652
- Transition Frequency :
- 400MHz
- hFE Min :
- 270
- Mount :
- Surface Mount
- Pin Count :
- 3
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Silver, Tin
- Gain Bandwidth Product :
- 400MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 25mA, 500mA
- Transistor Element Material :
- SILICON
- Current Rating :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Collector Emitter Breakdown Voltage :
- 12V
- Max Collector Current :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 80mV
- Collector Emitter Voltage (VCEO) :
- 12V
- Max Breakdown Voltage :
- 12V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- 12V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Datasheets
- 2SD2652T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2652T106 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 80mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 25mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 400MHz.Single BJT transistor can take a breakdown input voltage of 12V volts.During maximum operation, collector current can be as low as 1.5A volts.
2SD2652T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 400MHz
2SD2652T106 Applications
There are a lot of ROHM Semiconductor
2SD2652T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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