2SD2142KT146
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- Mfr.Part #
- 2SD2142KT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SMT3
- Stock
- 7,260
- In Stock ：
- 7,260
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 13 Weeks
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Polarity :
- NPN
- Continuous Collector Current :
- 300mA
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- Terminal Finish :
- TIN SILVER COPPER
- Gain Bandwidth Product :
- 200MHz
- HTS Code :
- 8541.21.00.75
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Voltage - Rated DC :
- 32V
- ECCN Code :
- EAR99
- hFE Min :
- 5000
- Base Part Number :
- 2SD2142
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Published :
- 2008
- Transition Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Current Rating :
- 300mA
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Contact Plating :
- Copper, Silver, Tin
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD2142KT146
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 300mA volts at its maximum.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor
2SD2142KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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