2SD2118TLQ
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- Mfr.Part #
- 2SD2118TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 20V 5A CPT3
- Stock
- 9,474
- In Stock ：
- 9,474
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Current Rating :
- 5A
- Voltage - Rated DC :
- 20V
- Transistor Type :
- NPN
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- HTS Code :
- 8541.29.00.75
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 150MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Tin
- Gain Bandwidth Product :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 20V
- Element Configuration :
- Single
- Base Part Number :
- 2SD2118
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- Published :
- 1998
- Max Power Dissipation :
- 10W
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 4A
- Max Breakdown Voltage :
- 20V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Datasheets
- 2SD2118TLQ
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD2118TLQ Overview
DC current gain in this device equals 120 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 5A volts.
2SD2118TLQ Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 150MHz
2SD2118TLQ Applications
There are a lot of ROHM Semiconductor
2SD2118TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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