2SD2114KT146V
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- Mfr.Part #
- 2SD2114KT146V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A SMT3
- Stock
- 78,559
- In Stock ：
- 78,559
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Termination :
- SMD/SMT
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- 150°C TJ
- Published :
- 2004
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 20V
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Max Power Dissipation :
- 200mW
- Continuous Collector Current :
- 500mA
- Pbfree Code :
- yes
- hFE Min :
- 820
- Collector Emitter Saturation Voltage :
- 180mV
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN/TIN COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 10mA 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Max Breakdown Voltage :
- 20V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 25V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Voltage - Rated DC :
- 20V
- Radiation Hardening :
- No
- Base Part Number :
- 2SD2114
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Transition Frequency :
- 350MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 12V
- Factory Lead Time :
- 13 Weeks
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 350MHz
- VCEsat-Max :
- 0.4 V
- Datasheets
- 2SD2114KT146V
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD2114KT146V Overview
DC current gain in this device equals 820 @ 10mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 180mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 350MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SD2114KT146V Features
the DC current gain for this device is 820 @ 10mA 3V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 350MHz
2SD2114KT146V Applications
There are a lot of ROHM Semiconductor
2SD2114KT146V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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