2SA2030T2L
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- Mfr.Part #
- 2SA2030T2L
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A VMT3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transition Frequency :
- 260MHz
- Collector Base Voltage (VCBO) :
- 15V
- Terminal Finish :
- TIN COPPER
- Pbfree Code :
- yes
- Current Rating :
- -500mA
- Collector Emitter Saturation Voltage :
- -100V
- Collector Emitter Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Package / Case :
- SOT-723
- Voltage - Rated DC :
- -12V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e2
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2008
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2SA2030
- Power Dissipation :
- 150mW
- Transistor Application :
- SWITCHING
- hFE Min :
- 270
- Emitter Base Voltage (VEBO) :
- -6V
- Gain Bandwidth Product :
- 260MHz
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 10mA 2V
- Max Breakdown Voltage :
- 12V
- Contact Plating :
- Copper, Tin
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- Frequency :
- 260MHz
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Max Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Datasheets
- 2SA2030T2L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2030T2L Overview
DC current gain in this device equals 270 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 200mA.An emitter's base voltage can be kept at -6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 500mA volts.
2SA2030T2L Features
the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -100V
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 260MHz
2SA2030T2L Applications
There are a lot of ROHM Semiconductor
2SA2030T2L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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