2SA2029T2LR
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- Mfr.Part #
- 2SA2029T2LR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A VMT3
- Stock
- 7,870
- In Stock ：
- 7,870
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Power Dissipation :
- 150mW
- Element Configuration :
- Single
- Length :
- 1.2mm
- Max Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e2
- Continuous Collector Current :
- -150mA
- Collector Emitter Breakdown Voltage :
- 50V
- Width :
- 800μm
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Height :
- 500μm
- Package / Case :
- SOT-723
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- PNP
- Frequency :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Base Part Number :
- 2SA2029
- Contact Plating :
- Copper, Tin
- Transistor Type :
- PNP
- Pin Count :
- 3
- Gain Bandwidth Product :
- 140MHz
- Max Collector Current :
- 150mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transition Frequency :
- 140MHz
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Collector Emitter Saturation Voltage :
- -500mV
- Max Power Dissipation :
- 150mW
- hFE Min :
- 120
- Number of Elements :
- 1
- Published :
- 2009
- Datasheets
- 2SA2029T2LR
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2029T2LR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 1mA 6V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -150mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
2SA2029T2LR Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
2SA2029T2LR Applications
There are a lot of ROHM Semiconductor
2SA2029T2LR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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