2SA2029T2LQ
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- Mfr.Part #
- 2SA2029T2LQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A VMT3
- Stock
- 5,435
- In Stock ：
- 5,435
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 1.2mm
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Published :
- 2009
- hFE Min :
- 120
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -50V
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 140MHz
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Max Frequency :
- 140MHz
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Continuous Collector Current :
- -150mA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Height :
- 500μm
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e2
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-723
- Element Configuration :
- Single
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SA2029
- Width :
- 800μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 150mA
- Current Rating :
- -150mA
- Factory Lead Time :
- 13 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Datasheets
- 2SA2029T2LQ
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2029T2LQ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at -150mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The current rating of this fuse is -150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SA2029T2LQ Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA2029T2LQ Applications
There are a lot of ROHM Semiconductor
2SA2029T2LQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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