2N7002V

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Power Dissipation :

250mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Mounting Type :

Surface Mount

Threshold Voltage :

1.76V

JESD-609 Code :

e3

Lead Free :

Lead Free

Radiation Hardening :

No

Weight :

32mg

Factory Lead Time :

11 Weeks

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Element Configuration :

Dual

Contact Plating :

Tin

Turn-Off Delay Time :

12.5 ns

Continuous Drain Current (ID) :

280mA

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Resistance :

7.5Ohm

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Terminations :

6

Turn On Delay Time :

5.85 ns

Width :

1.2mm

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Height :

600μm

Feedback Cap-Max (Crss) :

7 pF

Transistor Application :

SWITCHING

Length :

1.7mm

Drain to Source Voltage (Vdss) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

250mW

REACH SVHC :

No SVHC

Published :

2008

FET Type :

2 N-Channel (Dual)

Nominal Vgs :

1.76 V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99