2N7002V-7
- Mfr.Part #
- 2N7002V-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 0.28A SOT-563
- Stock
- 3,639
- In Stock :
- 3,639
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Finish :
- Matte Tin (Sn)
- FET Feature :
- Standard
- Current Rating :
- 280mA
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Feedback Cap-Max (Crss) :
- 5 pF
- Min Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 150mW
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 20 ns
- Width :
- 1.2mm
- Mount :
- Surface Mount
- Resistance :
- 7.5Ohm
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Transistor Application :
- SWITCHING
- Height :
- 600μm
- FET Type :
- 2 N-Channel (Dual)
- Lead Free :
- Lead Free
- Published :
- 2004
- Weight :
- 3.005049mg
- Number of Terminations :
- 6
- Length :
- 1.6mm
- Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 50mA, 5V
- Continuous Drain Current (ID) :
- 280mA
- Pin Count :
- 6
- Terminal Form :
- Flat
- Number of Channels :
- 2
- Turn On Delay Time :
- 20 ns
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 6
- Package / Case :
- SOT-563, SOT-666
- Element Configuration :
- Dual
- Additional Feature :
- High Reliability
- Datasheets
- 2N7002V-7

2N7002V-7 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
The 2N7002V-7 is designed for use in a variety of applications, including power management, motor control, and switching applications. It is designed to provide high switching speeds and low on-resistance, making it ideal for use in high-speed switching applications. It is also designed to provide low power consumption and high efficiency, making it suitable for use in power management applications. Additionally, it is designed to provide high noise immunity and ESD protection, making it suitable for use in motor control applications.
Overall, the Diodes Inc. Transistors - FETs, MOSFETs - Arrays 2N7002V-7 is a high-performance, reliable, and small package FET designed for use in a variety of applications. It is designed to provide high switching speeds, low on-resistance, low power consumption, high efficiency, high noise immunity, and ESD protection, making it suitable for use in power management, motor control, and switching applications.
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