2N7002PV,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 4.5V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Power Dissipation :

390mW

Number of Pins :

6

JESD-609 Code :

e3

Fall Time (Typ) :

5 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

2

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

350mA

Mounting Type :

Surface Mount

Rise Time :

4ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

60V

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Surface Mount :

yes

Power - Max :

330mW

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Pin Count :

6

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Package / Case :

SOT-563, SOT-666

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Factory Lead Time :

4 Weeks

Turn On Delay Time :

3 ns

Turn-Off Delay Time :

10 ns

Lead Free :

Lead Free

Max Power Dissipation :

330mW

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

0.35A

FET Technology :

METAL-OXIDE SEMICONDUCTOR