2N7002DWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

3Ohm

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

3.1 ns

Number of Terminations :

6

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Feedback Cap-Max (Crss) :

3 pF

Published :

2010

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

500mW

Number of Pins :

6

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Series :

OptiMOS™

Max Power Dissipation :

500mW

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Halogen Free :

Halogen Free

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

115mA

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.3A

Turn-Off Delay Time :

5.5 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Package / Case :

6-VSSOP, SC-88, SOT-363

Number of Elements :

2

Rise Time :

3.3ns

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

300mA

Pin Count :

6

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Dual Supply Voltage :

60V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount