2N7002DWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

5.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Qualification Status :

Not Qualified

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

3.3ns

Turn On Delay Time :

3 ns

Feedback Cap-Max (Crss) :

3 pF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

3Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 10V

REACH SVHC :

No SVHC

Power Dissipation :

500mW

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mount :

Surface Mount

Fall Time (Typ) :

3.1 ns

Continuous Drain Current (ID) :

115mA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Max Power Dissipation :

500mW

Mounting Type :

Surface Mount

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Published :

2010

Lead Free :

Lead Free

Series :

OptiMOS™

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Package / Case :

6-VSSOP, SC-88, SOT-363

Halogen Free :

Halogen Free

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Drain Current-Max (Abs) (ID) :

0.3A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

300mA

Gate to Source Voltage (Vgs) :

20V

Pin Count :

6

Transistor Application :

SWITCHING