2N7002DW
- Mfr.Part #
- 2N7002DW
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 0.115A SC70-6
- Stock
- 29,649
- In Stock :
- 29,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Pins :
- 6
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 50mA, 5V
- Resistance :
- 7.5Ohm
- Nominal Vgs :
- 1.76 V
- Width :
- 1.25mm
- Drain to Source Breakdown Voltage :
- 78V
- FET Feature :
- Logic Level Gate
- Turn-Off Delay Time :
- 12.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 115mA
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 2
- Turn On Delay Time :
- 5.85 ns
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Lead Free :
- Lead Free
- Rds On Max :
- 7.5 Ω
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Published :
- 2008
- Max Power Dissipation :
- 200mW
- Power Dissipation :
- 200mW
- Threshold Voltage :
- 1.76V
- Max Junction Temperature (Tj) :
- 150°C
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- SC-88 (SC-70-6)
- Drain to Source Resistance :
- 2Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 115mA
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power - Max :
- 200mW
- Input Capacitance :
- 50pF
- Number of Channels :
- 2
- Weight :
- 28mg
- REACH SVHC :
- No SVHC
- Length :
- 2mm
- Height :
- 1.1mm
- FET Type :
- 2 N-Channel (Dual)
- Contact Plating :
- Tin
- Element Configuration :
- Dual
- Min Operating Temperature :
- -55°C
- Datasheets
- 2N7002DW

2N7002DW datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
:
The 2N7002 is a Logic Level N-channel MOSFET with a vertical DMOS structure and a well-proven silicon-gate manufacturing method that operates at low voltage and low current. This combination results in a device that combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free of thermal runaway and thermally induced secondary breakdown, as is typical of all MOS architectures. Vertical DMOS FETs from Microchip are perfect for a variety of switching and amplifying applications that require a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. It is useful in power management applications due to its low on-state resistance and low input capacitance. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.
2N7002DW Features
:
? Dual N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? Low Input/Output Leakage
? Ultra-Small Surface Mount Package
? Lead Free/RoHS Compliant
2N7002DW Applications
:
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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