2N2857

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Mount :

Through Hole

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA, 1V

Terminal Position :

BOTTOM

Series :

--

HTS Code :

8541.21.00.75

Transition Frequency :

1000MHz

Supplier Device Package :

TO-72

Collector Emitter Voltage (VCEO) :

15V

Max Operating Temperature :

150°C

JESD-609 Code :

e0

Terminal Form :

Wire

Gain Bandwidth Product :

1.9 GHz

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

Polarity :

NPN

hFE Min :

30

Collector Emitter Breakdown Voltage :

15V

Element Configuration :

Single

Operating Temperature :

-65°C ~ 200°C (TJ)

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

40mA

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

2.5V

Collector Base Voltage (VCBO) :

30V

Min Operating Temperature :

-65°C

Package / Case :

TO-72

Max Collector Current :

40mA

Packaging :

Bulk

Number of Elements :

1

Collector-Base Capacitance-Max :

1pF

Mounting Type :

Through Hole

Power Dissipation-Max :

200mW

JESD-30 Code :

O-MBCY-W4

Frequency - Transition :

1.9GHz

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

15V

Pbfree Code :

No

DC Current Gain-Min (hFE) :

30

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Gain :

--

Power - Max :

200mW

Published :

2016

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant