2N2857UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Terminal Position :

Dual

Operating Temperature :

-65°C~200°C TJ

Published :

2007

Max Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

3V

JESD-609 Code :

e0

Package / Case :

3-SMD, No Lead

Number of Pins :

3

Polarity/Channel Type :

NPN

Pin Count :

3

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

Factory Lead Time :

22 Weeks

Mount :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Max Collector Current :

40mA

Packaging :

Bulk

Number of Terminations :

3

Power Dissipation :

200mW

Transistor Type :

NPN

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Configuration :

Single

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

30V

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

21dB

Terminal Finish :

TIN LEAD

Collector Emitter Voltage (VCEO) :

15V

Pbfree Code :

No

Number of Elements :

1