ZXTPS717MCTA
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- Mfr.Part #
- ZXTPS717MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.4A DFN3020B-8
- Stock
- 6,642
- In Stock ：
- 6,642
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2016
- JESD-609 Code :
- e4
- Transistor Type :
- PNP + Diode (Isolated)
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 12V
- Max Power Dissipation :
- 3W
- Element Configuration :
- Dual
- Max Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -10mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Terminations :
- 8
- Frequency - Transition :
- 100MHz
- Gain Bandwidth Product :
- 110MHz
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Base Voltage (VCBO) :
- -20V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 4.4A
- Package / Case :
- 8-VDFN Exposed Pad
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Continuous Collector Current :
- -4A
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Transition Frequency :
- 110MHz
- Mount :
- Surface Mount
- Datasheets
- ZXTPS717MCTA
PNP + Diode (Isolated) -55°C~150°C TJ 100nA 1 Elements 8 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZXTPS717MCTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -10mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 310mV @ 150mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A transition frequency of 110MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 4A volts at its maximum.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated
ZXTPS717MCTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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