ZXTPS717MCTA
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- Mfr.Part #
- ZXTPS717MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.4A DFN3020B-8
- Stock
- 6,642
- In Stock ：
- 6,642
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Frequency - Transition :
- 100MHz
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -20V
- Collector Emitter Breakdown Voltage :
- 12V
- Continuous Collector Current :
- -4A
- Package / Case :
- 8-VDFN Exposed Pad
- Collector Emitter Voltage (VCEO) :
- 300mV
- Collector Emitter Saturation Voltage :
- -10mV
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 4.4A
- Max Collector Current :
- 4A
- Transistor Type :
- PNP + Diode (Isolated)
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Dual
- JESD-609 Code :
- e4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Factory Lead Time :
- 16 Weeks
- Gain Bandwidth Product :
- 110MHz
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 12V
- Number of Terminations :
- 8
- Emitter Base Voltage (VEBO) :
- -7V
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Mounting Type :
- Surface Mount
- Published :
- 2016
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 3W
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 110MHz
- Number of Pins :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Datasheets
- ZXTPS717MCTA
PNP + Diode (Isolated) -55°C~150°C TJ 100nA 1 Elements 8 Terminations SILICON 8-VDFN Exposed Pad Tape & Reel (TR) Surface Mount
ZXTPS717MCTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 100mA 2V.With a collector emitter saturation voltage of -10mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 310mV @ 150mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A transition frequency of 110MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 4A volts at its maximum.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated
ZXTPS717MCTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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