ZXTP08400BFFTA
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- Mfr.Part #
- ZXTP08400BFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.2A SOT23F
- Stock
- 40,889
- In Stock ：
- 40,889
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -200mA
- Transistor Type :
- PNP
- Power Dissipation :
- 2W
- Package / Case :
- SOT-23-3 Flat Leads
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Height :
- 1mm
- Max Power Dissipation :
- 2W
- Base Part Number :
- ZXTP08400B
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 70MHz
- Max Breakdown Voltage :
- 400V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -140mV
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 70MHz
- Number of Terminations :
- 3
- Power - Max :
- 1.5W
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 400V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Length :
- 3mm
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 400V
- Max Collector Current :
- 200mA
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Width :
- 1.7mm
- Mounting Type :
- Surface Mount
- Weight :
- 48.789529mg
- Emitter Base Voltage (VEBO) :
- -7V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 5V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 40mA, 200mA
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 70MHz
- Collector Emitter Breakdown Voltage :
- 400V
- hFE Min :
- 100
- Element Configuration :
- Single
- Number of Elements :
- 1
- Datasheets
- ZXTP08400BFFTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTP08400BFFTA Overview
In this device, the DC current gain is 100 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -140mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 190mV @ 40mA, 200mA.Maintaining the continuous collector voltage at -200mA is essential for high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.70MHz is present in the transition frequency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
ZXTP08400BFFTA Features
the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 190mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 70MHz
ZXTP08400BFFTA Applications
There are a lot of Diodes Incorporated
ZXTP08400BFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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