ZXTP07012EFFTA
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- Mfr.Part #
- ZXTP07012EFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23F
- Stock
- 14
- In Stock ：
- 14
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Power Dissipation :
- 2W
- Published :
- 2006
- Gain Bandwidth Product :
- 250MHz
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 12V
- Power - Max :
- 1.5W
- Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Height :
- 1mm
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -7V
- Width :
- 1.7mm
- Transition Frequency :
- 250MHz
- Length :
- 3mm
- Max Collector Current :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -4A
- Weight :
- 48.789529mg
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Form :
- Gull wing
- Package / Case :
- SOT-23-3 Flat Leads
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 80mA, 4A
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 12V
- Lead Free :
- Lead Free
- Base Part Number :
- ZXTP07012E
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -75mV
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZXTP07012EFFTA
ZXTP07012EFFTA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTP07012EFFTA Overview
This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -75mV.A VCE saturation (Max) of 340mV @ 80mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4A volts is possible.
ZXTP07012EFFTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -75mV
the vce saturation(Max) is 340mV @ 80mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 250MHz
ZXTP07012EFFTA Applications
There are a lot of Diodes Incorporated
ZXTP07012EFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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