ZXTP05120HFFTA
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- Mfr.Part #
- ZXTP05120HFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 1A SOT23F
- Stock
- 8,332
- In Stock ：
- 8,332
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 768ns
- Height :
- 1mm
- Max Frequency :
- 150MHz
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 120V
- Transition Frequency :
- 150MHz
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- -10V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 2mA, 2A
- ECCN Code :
- EAR99
- Published :
- 2007
- Base Part Number :
- ZXTP05120H
- Package / Case :
- SOT-23-3 Flat Leads
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Turn Off Time-Max (toff) :
- 985ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 3000 @ 1A 5V
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 120V
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 10μA
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Polarity :
- PNP
- Lead Free :
- Lead Free
- Weight :
- 48.789529mg
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 120V
- Collector Emitter Saturation Voltage :
- 900mV
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 140V
- Length :
- 3mm
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Continuous Collector Current :
- -1A
- Datasheets
- ZXTP05120HFFTA
PNP - Darlington -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTP05120HFFTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 3000 @ 1A 5V.A collector emitter saturation voltage of 900mV ensures maximum design flexibility.A VCE saturation (Max) of 2V @ 2mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1A should be maintained to achieve high efficiency.With the emitter base voltage set at -10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Breakdown input voltage is 120V volts.A maximum collector current of 1A volts can be achieved.
ZXTP05120HFFTA Features
-
the DC current gain for this device is 3000 @ 1A 5V
-
a collector emitter saturation voltage of 900mV
-
the vce saturation(Max) is 2V @ 2mA, 2A
-
the emitter base voltage is kept at -10V
-
a transition frequency of 150MHz
ZXTP05120HFFTA Applications
There are a lot of Diodes Incorporated ZXTP05120HFFTA applications of single BJT transistors.
-
Interface
-
Muting
-
Inverter
-
Driver
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