ZXTP03200BZTA
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- Mfr.Part #
- ZXTP03200BZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT89-3
- Stock
- 28,576
- In Stock ：
- 28,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 105MHz
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1.1W
- Max Collector Current :
- 2A
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 260mV
- Continuous Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 105MHz
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- PNP
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 2A
- Collector Emitter Voltage (VCEO) :
- 200V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 200V
- Mounting Type :
- Surface Mount
- Weight :
- 130.492855mg
- JESD-30 Code :
- R-PSSO-F3
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 200V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 220V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-243AA
- Radiation Hardening :
- No
- Published :
- 2009
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- ZXTP03200BZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP03200BZTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZXTP03200BZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
ZXTP03200BZTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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