ZXTP03200BZTA
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- Mfr.Part #
- ZXTP03200BZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT89-3
- Stock
- 28,576
- In Stock ：
- 28,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Weight :
- 130.492855mg
- Published :
- 2009
- Gain Bandwidth Product :
- 105MHz
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 200V
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 200V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 1.1W
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- No
- Pin Count :
- 3
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 260mV
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- 2A
- Transition Frequency :
- 105MHz
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 220V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 200V
- Datasheets
- ZXTP03200BZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP03200BZTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZXTP03200BZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
ZXTP03200BZTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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