ZXTP03200BZTA

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Mfr.Part #
ZXTP03200BZTA
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 200V 2A SOT89-3
Stock
28,576
In Stock :
28,576

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
105MHz
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Pbfree Code :
No
Peak Reflow Temperature (Cel) :
260
Weight :
130.492855mg
Number of Pins :
4
Max Collector Current :
2A
JESD-30 Code :
R-PSSO-F3
Current - Collector Cutoff (Max) :
50nA ICBO
Transistor Type :
PNP
Transition Frequency :
105MHz
Mount :
Surface Mount
Transistor Application :
SWITCHING
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
7V
Vce Saturation (Max) @ Ib, Ic :
260mV @ 400mA, 2A
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
260mV
JESD-609 Code :
e3
Package / Case :
TO-243AA
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
200V
Factory Lead Time :
15 Weeks
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
Max Breakdown Voltage :
200V
Published :
2009
Terminal Form :
Flat
Collector Emitter Breakdown Voltage :
200V
Continuous Collector Current :
2A
Case Connection :
COLLECTOR
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
1.1W
REACH SVHC :
No SVHC
Terminal Finish :
Matte Tin (Sn)
Collector Base Voltage (VCBO) :
220V
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP03200BZTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:4, Package / Case:TO-243AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, ZXTP03200BZTA pinout, ZXTP03200BZTA datasheet PDF, ZXTP03200BZTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP03200BZTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP03200BZTA


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

ZXTP03200BZTA Overview


In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

ZXTP03200BZTA Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz


ZXTP03200BZTA Applications


There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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