ZXTP03200BZTA
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- Mfr.Part #
- ZXTP03200BZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT89-3
- Stock
- 28,576
- In Stock ：
- 28,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 2A
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PSSO-F3
- Collector Base Voltage (VCBO) :
- 220V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 105MHz
- Max Breakdown Voltage :
- 200V
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 200V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 105MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 200V
- Continuous Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2009
- Pbfree Code :
- No
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 260mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 130.492855mg
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 1.1W
- Max Collector Current :
- 2A
- Datasheets
- ZXTP03200BZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP03200BZTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZXTP03200BZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
ZXTP03200BZTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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