ZXTP03200BZTA
- Mfr.Part #
- ZXTP03200BZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT89-3
- Stock
- 28,576
- In Stock :
- 28,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 105MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 130.492855mg
- Number of Pins :
- 4
- Max Collector Current :
- 2A
- JESD-30 Code :
- R-PSSO-F3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- PNP
- Transition Frequency :
- 105MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 2A
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 260mV
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 200V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 200V
- Published :
- 2009
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 200V
- Continuous Collector Current :
- 2A
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.1W
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 220V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Datasheets
- ZXTP03200BZTA
ZXTP03200BZTA Documents

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP03200BZTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZXTP03200BZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
ZXTP03200BZTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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