ZXTP03200BZTA
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- Mfr.Part #
- ZXTP03200BZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT89-3
- Stock
- 28,576
- In Stock ：
- 28,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Weight :
- 130.492855mg
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2009
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 200V
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 200V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 260mV
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 2A
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Transition Frequency :
- 105MHz
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1.1W
- JESD-30 Code :
- R-PSSO-F3
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Continuous Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 220V
- Pin Count :
- 3
- Max Breakdown Voltage :
- 200V
- Gain Bandwidth Product :
- 105MHz
- ECCN Code :
- EAR99
- Datasheets
- ZXTP03200BZTA
ZXTP03200BZTA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP03200BZTA Overview
In this device, the DC current gain is 100 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 260mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 400mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.105MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
ZXTP03200BZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
ZXTP03200BZTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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