ZXTP19020DGTA
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- Mfr.Part #
- ZXTP19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 8A SOT223-3
- Stock
- 20,084
- In Stock ：
- 20,084
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Pbfree Code :
- No
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Max Frequency :
- 176MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 800mA, 8A
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Power Dissipation :
- 5.3W
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 7.994566mg
- Base Part Number :
- ZXTP19020D
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 275mV
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Height :
- 1.65mm
- Case Connection :
- COLLECTOR
- Power - Max :
- 3W
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 25V
- Terminal Position :
- Dual
- Max Collector Current :
- 8A
- Transition Frequency :
- 176MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 20V
- Gain Bandwidth Product :
- 176MHz
- Max Breakdown Voltage :
- 20V
- Width :
- 3.7mm
- hFE Min :
- 300
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Datasheets
- ZXTP19020DGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19020DGTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 275mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 275mV @ 800mA, 8A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 176MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 8A volts.
ZXTP19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 275mV
the vce saturation(Max) is 275mV @ 800mA, 8A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz
ZXTP19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTP19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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