ZXTP19020DGTA
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- Mfr.Part #
- ZXTP19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 8A SOT223-3
- Stock
- 20,084
- In Stock ：
- 20,084
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZXTP19020D
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 5.3W
- Published :
- 2007
- Length :
- 6.7mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Transition Frequency :
- 176MHz
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 20V
- Width :
- 3.7mm
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 20V
- Height :
- 1.65mm
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 25V
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 176MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 800mA, 8A
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Power - Max :
- 3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- hFE Min :
- 300
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- 275mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Max Frequency :
- 176MHz
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Max Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Datasheets
- ZXTP19020DGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19020DGTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 275mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 275mV @ 800mA, 8A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 176MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 8A volts.
ZXTP19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 275mV
the vce saturation(Max) is 275mV @ 800mA, 8A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz
ZXTP19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTP19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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