ZXTP722MATA
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- Mfr.Part #
- ZXTP722MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS PNP 70V 2.5A DFN2020B-3
- Stock
- 9,924
- In Stock ：
- 9,924
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 5V
- Current - Collector (Ic) (Max) :
- 2.5A
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 70V
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 200mA, 1.5A
- Packaging :
- Digi-Reel®
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Base Part Number :
- ZXTP722
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 25nA
- Collector Emitter Breakdown Voltage :
- 70V
- Collector Base Voltage (VCBO) :
- 70V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Additional Feature :
- High Reliability
- Package / Case :
- 3-UDFN
- Collector Emitter Saturation Voltage :
- -270mV
- Height :
- 580μm
- Transistor Element Material :
- SILICON
- Frequency :
- 180MHz
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 70V
- Max Collector Current :
- 2.7A
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -7.5V
- Power - Max :
- 3W
- Number of Terminations :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Width :
- 2.075mm
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 2.45W
- Transition Frequency :
- 180MHz
- Length :
- 2.08mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e4
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -2.5A
- Gain Bandwidth Product :
- 180MHz
- Power Dissipation :
- 2.45W
- Number of Elements :
- 1
- Published :
- 2011
- Datasheets
- ZXTP722MATA
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP 3-UDFN Digi-Reel® Surface Mount
ZXTP722MATA Overview
In this device, the DC current gain is 40 @ 1.5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -270mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 260mV @ 200mA, 1.5A.A -2.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7.5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 70V volts.Single BJT transistor is possible for the collector current to fall as low as 2.7A volts at Single BJT transistors maximum.
ZXTP722MATA Features
the DC current gain for this device is 40 @ 1.5A 5V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 260mV @ 200mA, 1.5A
the emitter base voltage is kept at -7.5V
a transition frequency of 180MHz
ZXTP722MATA Applications
There are a lot of Diodes Incorporated
ZXTP722MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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