ZXTP5401ZTA
- Mfr.Part #
- ZXTP5401ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT89-3
- Stock
- 225
- In Stock :
- 225
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pbfree Code :
- No
- Height :
- 1.6mm
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Length :
- 4.6mm
- Power Dissipation :
- 1.2W
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Pin Count :
- 3
- Number of Elements :
- 1
- Base Part Number :
- ZXTP5401
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 160V
- Max Collector Current :
- 600mA
- Width :
- 2.6mm
- Package / Case :
- TO-243AA
- Weight :
- 51.993025mg
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 150V
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.2W
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 150V
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Breakdown Voltage :
- 150V
- Collector Emitter Saturation Voltage :
- -500mV
- Datasheets
- ZXTP5401ZTA
ZXTP5401ZTA Documents

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP5401ZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 150V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
ZXTP5401ZTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401ZTA Applications
There are a lot of Diodes Incorporated
ZXTP5401ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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