ZXTP5401GTA

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Mfr.Part #
ZXTP5401GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 150V 0.6A SOT223-3
Stock
32,458
In Stock :
32,458

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Base Part Number :
ZXTP5401
Max Collector Current :
2A
Max Power Dissipation :
2W
Packaging :
Tape and Reel (TR)
Package / Case :
TO-261-4, TO-261AA
Collector Base Voltage (VCBO) :
160V
Collector Emitter Voltage (VCEO) :
150V
RoHS Status :
ROHS3 Compliant
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Length :
6.7mm
Current - Collector (Ic) (Max) :
600mA
Element Configuration :
Single
Case Connection :
COLLECTOR
Width :
3.7mm
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Transistor Element Material :
SILICON
Power Dissipation :
2W
Frequency :
100MHz
Height :
1.65mm
Pin Count :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Terminal Finish :
Matte Tin (Sn)
Max Breakdown Voltage :
150V
REACH SVHC :
No SVHC
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Radiation Hardening :
No
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
-500mV
ECCN Code :
EAR99
Factory Lead Time :
15 Weeks
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
AMPLIFIER
Number of Terminations :
4
Terminal Position :
Dual
Published :
2007
Number of Pins :
4
Current - Collector Cutoff (Max) :
50nA ICBO
Collector Emitter Breakdown Voltage :
150V
Pbfree Code :
No
Weight :
7.994566mg
Gain Bandwidth Product :
100MHz
Transistor Type :
PNP
Terminal Form :
Gull wing
Polarity/Channel Type :
PNP
Datasheets
ZXTP5401GTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP5401GTA from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:ZXTP5401, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:4, Number of Pins:4, ZXTP5401GTA pinout, ZXTP5401GTA datasheet PDF, ZXTP5401GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP5401GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP5401GTA


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTP5401GTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 2A volts.

ZXTP5401GTA Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


ZXTP5401GTA Applications


There are a lot of Diodes Incorporated
ZXTP5401GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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