ZXTP5401GTA
- Mfr.Part #
- ZXTP5401GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT223-3
- Stock
- 32,458
- In Stock :
- 32,458
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Base Part Number :
- ZXTP5401
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 160V
- Collector Emitter Voltage (VCEO) :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Length :
- 6.7mm
- Current - Collector (Ic) (Max) :
- 600mA
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Width :
- 3.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2W
- Frequency :
- 100MHz
- Height :
- 1.65mm
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 150V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -500mV
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Published :
- 2007
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 150V
- Pbfree Code :
- No
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Datasheets
- ZXTP5401GTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP5401GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 2A volts.
ZXTP5401GTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401GTA Applications
There are a lot of Diodes Incorporated
ZXTP5401GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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