ZXTP5401GTA
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- Mfr.Part #
- ZXTP5401GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT223-3
- Stock
- 32,458
- In Stock ：
- 32,458
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 150V
- Max Power Dissipation :
- 2W
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.65mm
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 150V
- JESD-609 Code :
- e3
- Number of Pins :
- 4
- Current - Collector (Ic) (Max) :
- 600mA
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Base Part Number :
- ZXTP5401
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 150V
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Length :
- 6.7mm
- Collector Base Voltage (VCBO) :
- 160V
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Width :
- 3.7mm
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTP5401GTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP5401GTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 2A volts.
ZXTP5401GTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401GTA Applications
There are a lot of Diodes Incorporated
ZXTP5401GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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