ZXTP25140BFHTA
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- Mfr.Part #
- ZXTP25140BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A SOT23-3
- Stock
- 20,767
- In Stock ：
- 20,767
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.81W
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 140V
- Published :
- 2006
- Power - Max :
- 1.25W
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 180V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 75MHz
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 75MHz
- Transistor Application :
- SWITCHING
- Height :
- 1mm
- Collector Emitter Saturation Voltage :
- -260mV
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.81W
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 75MHz
- Collector Emitter Voltage (VCEO) :
- 140V
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Base Part Number :
- ZXTP25140
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 100mA, 1A
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Max Breakdown Voltage :
- 140V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -140V
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- Gull wing
- Current Rating :
- -1A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Width :
- 1.3mm
- Weight :
- 7.994566mg
- Datasheets
- ZXTP25140BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25140BFHTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 2V.With a collector emitter saturation voltage of -260mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 75MHz is present in the part.There is a breakdown input voltage of 140V volts that it can take.Collector current can be as low as 1A volts at its maximum.
ZXTP25140BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 260mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 75MHz
ZXTP25140BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25140BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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