ZXTP25140BFHTA
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- Mfr.Part #
- ZXTP25140BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A SOT23-3
- Stock
- 20,767
- In Stock ：
- 20,767
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 140V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 140V
- Length :
- 2.9mm
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 12 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -260mV
- Power Dissipation :
- 1.81W
- Transition Frequency :
- 75MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Base Part Number :
- ZXTP25140
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 140V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.81W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Power - Max :
- 1.25W
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 100mA, 1A
- Number of Pins :
- 3
- Number of Elements :
- 1
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Collector Base Voltage (VCBO) :
- 180V
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 75MHz
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 75MHz
- Voltage - Rated DC :
- -140V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1mm
- Datasheets
- ZXTP25140BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25140BFHTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 2V.With a collector emitter saturation voltage of -260mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 75MHz is present in the part.There is a breakdown input voltage of 140V volts that it can take.Collector current can be as low as 1A volts at its maximum.
ZXTP25140BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 260mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 75MHz
ZXTP25140BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25140BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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