ZXTP25140BFHTA
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- Mfr.Part #
- ZXTP25140BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 1A SOT23-3
- Stock
- 20,767
- In Stock ：
- 20,767
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.81W
- Length :
- 2.9mm
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Transition Frequency :
- 75MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -260mV
- Collector Emitter Breakdown Voltage :
- 140V
- Factory Lead Time :
- 12 Weeks
- Current Rating :
- -1A
- Voltage - Rated DC :
- -140V
- Power - Max :
- 1.25W
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Height :
- 1mm
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 100mA, 1A
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 75MHz
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 75MHz
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 180V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- PNP
- Base Part Number :
- ZXTP25140
- Power Dissipation :
- 1.81W
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 140V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 1A
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 140V
- Pin Count :
- 3
- Datasheets
- ZXTP25140BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25140BFHTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 2V.With a collector emitter saturation voltage of -260mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 75MHz is present in the part.There is a breakdown input voltage of 140V volts that it can take.Collector current can be as low as 1A volts at its maximum.
ZXTP25140BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 260mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 75MHz
ZXTP25140BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25140BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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