ZXTP25100CFHTA
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- Mfr.Part #
- ZXTP25100CFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT23-3
- Stock
- 6,702
- In Stock ：
- 6,702
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 100mA, 1A
- Power - Max :
- 1.25W
- Mount :
- Surface Mount
- Power Dissipation :
- 1.81W
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Transition Frequency :
- 180MHz
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Frequency :
- 180MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Height :
- 1.02mm
- Collector Emitter Saturation Voltage :
- -220mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 115V
- Weight :
- 7.994566mg
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXTP25100C
- Gain Bandwidth Product :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 1.81W
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTP25100CFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25100CFHTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -220mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 180MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZXTP25100CFHTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP25100CFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25100CFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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