ZXTP25100BFHTA
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- Mfr.Part #
- ZXTP25100BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT23-3
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1mm
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Frequency :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- ZXTP25100B
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Weight :
- 7.994566mg
- Current Rating :
- -2A
- Length :
- 3.05mm
- Current - Collector (Ic) (Max) :
- 2A
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 140V
- Power - Max :
- 1.25W
- Supplier Device Package :
- SOT-23-3
- Max Frequency :
- 200MHz
- Radiation Hardening :
- No
- Polarity :
- PNP
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -215mV
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.81W
- Emitter Base Voltage (VEBO) :
- -7V
- Width :
- 1.4mm
- Max Power Dissipation :
- 1.81W
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 200MHz
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- -100V
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 200MHz
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Datasheets
- ZXTP25100BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -215mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 295mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Input voltage breakdown is available at 100V volts.Product comes in the supplier's device package SOT-23-3.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZXTP25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -215mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
the supplier device package of SOT-23-3
ZXTP25100BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25100BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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