ZXTP25100BFHTA
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- Mfr.Part #
- ZXTP25100BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT23-3
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 2A
- Frequency :
- 200MHz
- Power Dissipation :
- 1.81W
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -215mV
- Frequency - Transition :
- 200MHz
- Max Operating Temperature :
- 150°C
- Published :
- 2006
- Supplier Device Package :
- SOT-23-3
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 100V
- Max Breakdown Voltage :
- 100V
- Max Collector Current :
- 2A
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Voltage - Rated DC :
- -100V
- Emitter Base Voltage (VEBO) :
- -7V
- Weight :
- 7.994566mg
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Base Part Number :
- ZXTP25100B
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.05mm
- Min Operating Temperature :
- -55°C
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Height :
- 1mm
- Max Frequency :
- 200MHz
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Polarity :
- PNP
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.81W
- Gain Bandwidth Product :
- 200MHz
- Current Rating :
- -2A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power - Max :
- 1.25W
- Datasheets
- ZXTP25100BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -215mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 295mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Input voltage breakdown is available at 100V volts.Product comes in the supplier's device package SOT-23-3.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZXTP25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -215mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
the supplier device package of SOT-23-3
ZXTP25100BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25100BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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