ZXTP25060BFHTA
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- Mfr.Part #
- ZXTP25060BFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT23-3
- Stock
- 7,306
- In Stock ：
- 7,306
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 60V
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- -3A
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- Dual
- Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZXTP25060
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.05mm
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.81W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 1.25W
- Collector Emitter Saturation Voltage :
- -235mV
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -60V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation :
- 1.81W
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 235mV @ 300mA, 3A
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 2V
- Datasheets
- ZXTP25060BFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25060BFHTA Overview
This device has a DC current gain of 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -235mV.A VCE saturation (Max) of 235mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
ZXTP25060BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -235mV
the vce saturation(Max) is 235mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 250MHz
ZXTP25060BFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25060BFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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