ZXTP25040DZTA
- Mfr.Part #
- ZXTP25040DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT89-3
- Stock
- 1,339
- In Stock :
- 1,339
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 350mA, 3.5A
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Frequency :
- 270MHz
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 2.4W
- Power Dissipation :
- 4.46W
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -350mV
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 1.6mm
- Base Part Number :
- ZXTP25040D
- Length :
- 4.6mm
- Transition Frequency :
- 270MHz
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Weight :
- 51.993025mg
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 270MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Max Power Dissipation :
- 4.46W
- Max Breakdown Voltage :
- 40V
- Width :
- 2.6mm
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Published :
- 2007
- Datasheets
- ZXTP25040DZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25040DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 350mA, 3.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.270MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXTP25040DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 270MHz
ZXTP25040DZTA Applications
There are a lot of Diodes Incorporated
ZXTP25040DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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