ZXTP25040DZTA
- Mfr.Part #
- ZXTP25040DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT89-3
- Stock
- 1,339
- In Stock :
- 1,339
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 350mA, 3.5A
- Transition Frequency :
- 270MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- Frequency :
- 270MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Surface Mount
- Power - Max :
- 2.4W
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- Gain Bandwidth Product :
- 270MHz
- Weight :
- 51.993025mg
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 40V
- Length :
- 4.6mm
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- -350mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 45V
- Number of Elements :
- 1
- Max Power Dissipation :
- 4.46W
- Transistor Type :
- PNP
- Power Dissipation :
- 4.46W
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Base Part Number :
- ZXTP25040D
- JESD-30 Code :
- R-PSSO-F3
- Height :
- 1.6mm
- Datasheets
- ZXTP25040DZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25040DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 350mA, 3.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.270MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXTP25040DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 350mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 270MHz
ZXTP25040DZTA Applications
There are a lot of Diodes Incorporated
ZXTP25040DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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