ZXTP25020DGTA
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- Mfr.Part #
- ZXTP25020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 6A SOT223-3
- Stock
- 5,956
- In Stock ：
- 5,956
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 290MHz
- Collector Emitter Saturation Voltage :
- -355mV
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 6A
- Power - Max :
- 3W
- Frequency :
- 290MHz
- Max Power Dissipation :
- 5.3W
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2007
- Pin Count :
- 4
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Width :
- 3.5mm
- Collector Base Voltage (VCBO) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTP25020D
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 20V
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 5.3W
- Length :
- 6.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 355mV @ 600mA, 6A
- Number of Pins :
- 4
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 290MHz
- Pbfree Code :
- No
- Height :
- 1.6mm
- Lead Free :
- Lead Free
- Datasheets
- ZXTP25020DGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP25020DGTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -355mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 355mV @ 600mA, 6A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 290MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
ZXTP25020DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -355mV
the vce saturation(Max) is 355mV @ 600mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 290MHz
ZXTP25020DGTA Applications
There are a lot of Diodes Incorporated
ZXTP25020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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