ZXTP25020DFLTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

ECCN Code :

EAR99

Factory Lead Time :

15 Weeks

Collector Emitter Saturation Voltage :

260mV

Frequency :

290MHz

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

260mV @ 400mA, 4A

Weight :

7.994566mg

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Voltage (VCEO) :

20V

Pin Count :

3

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Max Collector Current :

1.5A

Collector Base Voltage (VCBO) :

25V

Emitter Base Voltage (VEBO) :

7V

Transition Frequency :

290MHz

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

350mW

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Gain Bandwidth Product :

290MHz

Number of Terminations :

3

Max Breakdown Voltage :

20V

JESD-609 Code :

e3

Terminal Position :

Dual

Published :

2007

Width :

1.4mm

Polarity/Channel Type :

PNP

Element Configuration :

Single

Number of Pins :

3

Length :

3.04mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Power Dissipation :

350mW

Base Part Number :

ZXTP25020D

Number of Elements :

1

Height :

1.02mm

Mounting Type :

Surface Mount