ZXTP25020DFHTA
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- Mfr.Part #
- ZXTP25020DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A SOT23-3
- Stock
- 6,694
- In Stock ：
- 6,694
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 400mA, 4A
- Height :
- 1mm
- Length :
- 3.05mm
- Weight :
- 7.994566mg
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Terminations :
- 3
- Continuous Collector Current :
- -4A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Base Part Number :
- ZXTP25020D
- Collector Base Voltage (VCBO) :
- 25V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 20V
- Max Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 4A
- Collector Emitter Saturation Voltage :
- 60mV
- Power - Max :
- 1.25W
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 290MHz
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.81W
- Factory Lead Time :
- 15 Weeks
- Published :
- 2006
- Power Dissipation :
- 1.81W
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Transition Frequency :
- 290MHz
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 290MHz
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Datasheets
- ZXTP25020DFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25020DFHTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 60mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 400mA, 4A.A -4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 290MHz.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
ZXTP25020DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 290MHz
ZXTP25020DFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25020DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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